SiO2 Thermal Oxide Silicon Wafer 2 4 6 Inch Silicon Dioxide Substrate
USD 71.43 USD
Specifications
| Diameter | 2 inch |
| Oxide Thickness | 300nm |
| Brand | Unbranded |
| Unit Type | Unit |
| Wafer Type | Oxidized Silicon Wafer |
| Model | SiO2 Silicon Wafer |
| Wafer Diameter | 2 in / 4 in / 6 in |
| Surface Finish | Polished |
| Features | Thermal Oxide Layer |
| Country Of Origin | China |
Research Use ：Can be used as SiO2 substrate, silicon dioxide wafer, oxidized silicon wafer, or lab sample wafer. The wafer is made with asilicon dioxide thermal oxide layer on a polished silicon wafer substrate.
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