SiO2 Silicon Wafer Thermal Oxide Layer Polished Semiconductor Substrate
USD 98.99 USD
Specifications
| Diameter | 2 inch |
| Oxide Thickness | 300nm |
| Brand | Unbranded |
| Unit Type | Unit |
| Wafer Type | Oxidized Silicon Wafer |
| Model | SiO2 Silicon Wafer |
| Wafer Diameter | 2 in / 4 in / 6 in |
| Surface Finish | Polished |
| Features | Thermal Oxide Layer |
| Country Of Origin | China |
The wafer is made with asilicon dioxide thermal oxide layer on a polished silicon wafer substrate. It can be used as aSiO2 silicon wafer ,silicon dioxide wafer ,thermal oxide wafer ,oxidized silicon wafer, orpolished semiconductor substrate for compatible laboratory and research projects.

