SiO2 Silicon Wafer Thermal Oxide Layer Polished Semiconductor Substrate

SiO2 Silicon Wafer Thermal Oxide Layer Polished Semiconductor Substrate

USD 98.99 USD
SKU: NI6Tyl2t
Brand: Unbranded
GTIN: Does not apply
Condition: New

Specifications

Diameter2 inch
Oxide Thickness300nm
BrandUnbranded
Unit TypeUnit
Wafer TypeOxidized Silicon Wafer
ModelSiO2 Silicon Wafer
Wafer Diameter2 in / 4 in / 6 in
Surface FinishPolished
FeaturesThermal Oxide Layer
Country Of OriginChina

The wafer is made with asilicon dioxide thermal oxide layer on a polished silicon wafer substrate. It can be used as aSiO2 silicon wafer ,silicon dioxide wafer ,thermal oxide wafer ,oxidized silicon wafer, orpolished semiconductor substrate for compatible laboratory and research projects.

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